The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Dec. 22, 2006
Applicants:
Masaki Yoshizawa, Yorktown Heights, NY (US);
Leonardus Leunissen, Hamme-Mille, BE;
Inventors:
Masaki Yoshizawa, Yorktown Heights, NY (US);
Leonardus Leunissen, Hamme-Mille, BE;
Assignees:
IMEC, Leuven, BE;
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
One inventive aspect relates to an attenuated phase shift mask suitable for hyper NA lithographic processing of a device, to a method of making such a mask and to hyper NA lithographic processing using such a mask. The attenuated phase shift mask is made taking into the effect of the numerical aperture of the lithographic system on which the attenuated phase shift mask is to be used.
Yoshizawa, Masaki. (2010). Method for manufacturing attenuated phase-shift masks and devices obtained therefrom (U.S. Patent No. 7709160). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7709160
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile