The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Oct. 17, 2006
Mark Nichols, San Jose, CA (US);
Bill Edward Higgins, Palo Alto, CA (US);
Michael Mallary, Sterling, MA (US);
Lydia Baril, Bouc Bel Air, FR;
Mark Nichols, San Jose, CA (US);
Bill Edward Higgins, Palo Alto, CA (US);
Michael Mallary, Sterling, MA (US);
Lydia Baril, Bouc Bel Air, FR;
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A slider includes a Tunneling Magneto-Resistive (TuMR) read sensor and a shunt resistor connected in parallel. The shunt resistor may be located in a read structure of the slider. The shunt resistor may reduce a total resistance of the read structure and any corresponding impedance mismatch between the read structure, a transmission line, and a preamplifier. The shunt resistor may be made of a material having a near zero thermal coefficient of resistivity (TCR) to test a quality of the TuMR read sensor. The TuMR read sensor may be deemed defective if its TCR deviates from a population average by a specific criterion. The TuMR read sensor may include a MgO tunneling barrier to improve signal strength. The TuMR read sensor may include a free layer that is able to be saturated with a perpendicular background field to calculate a more accurate TCR of the TuMR read sensor.