The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Sep. 07, 2007
Applicant:
James Jen-ho Wang, Phoenix, AZ (US);
Inventor:
James Jen-Ho Wang, Phoenix, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 21/16 (2006.01);
U.S. Cl.
CPC ...
Abstract
An annular trench region is formed at a semiconductor substrate of an electronic device that defines a conductive plug of the through-wafer via, wherein the conductive plug includes an undisturbed portion of the semiconductor substrate.
Quick Actions:
Wang, James Jen-Ho. (2010). Substrate having through-wafer vias and method of forming (U.S. Patent No. 7705440). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7705440
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