The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Jan. 15, 2008
Oh-kyum Kwon, Gyeonggi-do, KR;
Yong-chan Kim, Gyeonggi-do, KR;
Joon-suk OH, Seoul, KR;
Myung-hee Kim, Gyeonggi-do, KR;
Hye-young Park, Seoul, KR;
Oh-kyum Kwon, Gyeonggi-do, KR;
Yong-chan Kim, Gyeonggi-do, KR;
Joon-suk Oh, Seoul, KR;
Myung-hee Kim, Gyeonggi-do, KR;
Hye-young Park, Seoul, KR;
Abstract
Some embodiments of the present invention provide high voltage transistors including a semiconductor substrate and a device isolation film defining an active region in the semiconductor substrate. A gate electrode extends along a central portion of the active region while maintaining a predetermined width on the semiconductor substrate. A second well is formed on both sides of the gate electrode in the semiconductor substrate, and partially extends to a bottom surface of the device isolation film. The active region in the semiconductor substrate comprises a first active region disposed under the gate electrode, and separating the device isolation film and a second active region defined by the first active region and the device isolation film. Methods of manufacturing high voltage transistors are also provided.