The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Sep. 28, 2006
Applicant:
Tomoyuki Ohshima, Tokyo, JP;
Inventor:
Tomoyuki Ohshima, Tokyo, JP;
Assignee:
Oki Semiconductor Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/812 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field effect transistor having a double recess structure, which minimizes an influence exerted on a channel region depending upon the surface state of an outer recess section. In the field effect transistor having such a double recess structure, an ohmic contact layer at the surface of the outer recess section is made to have a thickness so as to be in a to completely depleted state.