The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2010

Filed:

Apr. 27, 2007
Applicants:

Jung-min OH, Incheon, KR;

Jeong-nam Han, Seoul, KR;

Chang-ki Hong, Gyeonggi-do, KR;

Kun-tack Lee, Gyeonggi-do, KR;

Dae-hyuk Kang, Gyeonggi-do, KR;

Sung-il Cho, Seoul, KR;

Inventors:

Jung-Min Oh, Incheon, KR;

Jeong-Nam Han, Seoul, KR;

Chang-Ki Hong, Gyeonggi-do, KR;

Kun-Tack Lee, Gyeonggi-do, KR;

Dae-Hyuk Kang, Gyeonggi-do, KR;

Sung-Il Cho, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device is provided. The method includes forming a mold for forming a storage electrode, forming sacrificial spacers at side walls of openings in the mold, forming a conductive film for a storage electrode along the inside of the openings, removing the mold by a wet etching process, removing the sacrificial spacers by a dry etching process, and sequentially forming a dielectric film and an upper electrode on the storage electrode.


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