The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Jun. 22, 2009
Seok-woo Lee, Gyeonggido, KR;
Jae-sung Yu, Seoul, KR;
Seok-Woo Lee, Gyeonggido, KR;
Jae-Sung Yu, Seoul, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and source and drain electrodes spaced apart from each other with respect to the gate electrode and extending along the first direction, wherein each of the plurality of active layers includes a channel region overlapped with the gate electrode, a source region, a drain region, and lightly doped drain (LDD) regions, one between the channel region and the source region and another one between the channel region and the drain region, wherein the LDD regions of the adjacent active layers have different lengths from each other.