The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2010

Filed:

Feb. 15, 2006
Applicants:

Zhenan Bao, Millburn, NJ (US);

Howard Edan Katz, Owings Mills, MD (US);

Jeffrey Scott Meth, Landenberg, PA (US);

Inventors:

Zhenan Bao, Millburn, NJ (US);

Howard Edan Katz, Owings Mills, MD (US);

Jeffrey Scott Meth, Landenberg, PA (US);

Assignees:

Lucent Technologies, Inc., Murray Hill, NJ (US);

E.I. du Pont de Nemours and Company, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.


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