The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Feb. 23, 2007
Timothy G. Dunham, South Burlington, VT (US);
Robert K. Leidy, Burlington, VT (US);
Kevin N. Ogg, Burlington, VT (US);
Richard J. Rassel, Colchester, VT (US);
Valarmathi C. Shanmugam, Essex Junction, VT (US);
Timothy G. Dunham, South Burlington, VT (US);
Robert K. Leidy, Burlington, VT (US);
Kevin N. Ogg, Burlington, VT (US);
Richard J. Rassel, Colchester, VT (US);
Valarmathi C. Shanmugam, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Stitched integrated circuit (IC) chip layout methods, systems and program products are disclosed. In one embodiment, a method includes obtaining from a first entity a circuit design for an IC chip layout that exceeds a size of a photolithography tool field at a second entity, wherein the IC chip layout includes for at least one stitched region of a plurality of stitched regions: a boundary identification identifying a boundary of the at least one stitched region at which stitching occurs and a type indicator indicating whether the at least one stitched region is one of: redundant and unique; dissecting the IC chip layout into stitched regions indicated as unique or redundant at the second entity; and generating a photolithographic reticle at the second entity based on the plurality of stitched regions, the photolithographic reticle having a size that fits within the size of the photolithographic tool field at the second entity.