The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Apr. 02, 2008
Yoon Ho Choi, Seoul, KR;
Yoon Ho Choi, Seoul, KR;
LG Electronics Inc., Seoul, KR;
Abstract
A semiconductor laser diode having a graded interlayer is provided. The semiconductor laser diode has the graded interlayer between an active layer composed of InGaN and an electron blocking layer (EBL) composed of AlGaN. The graded interlayer is composed of InAlGaN(0≦x≦0.2, 0≦y≦0.5) and is formed by grading a composition of group III materials. Accordingly, the active layer and the p-EBL have a reduced difference in rigidities and lattice parameters, and an abrupt gradient of an energy band and generation of a strain can be avoided in an interface between the active layer and the p-EBL. Since a crack can be prevented from being generated along the interface between the active layer and the p-EBL when a cleavage facet is formed, characteristics of the semiconductor laser diode can be improved.