The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2010

Filed:

Nov. 06, 2008
Applicants:

Mark Webster, Bethlehem, PA (US);

David Piede, Allentown, PA (US);

Prakash Gothoskar, Allentown, PA (US);

Inventors:

Mark Webster, Bethlehem, PA (US);

David Piede, Allentown, PA (US);

Prakash Gothoskar, Allentown, PA (US);

Assignee:

Lightwire, Inc., Allentown, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/10 (2006.01); H01S 3/13 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon-on-insulator (SOI)-based tunable laser is formed to include the gain medium (such as a semiconductor optical amplifier) disposed within a cavity formed within the SOI substrate. A tunable wavelength reflecting element and associated phase matching element are formed on the surface of the SOI structure, with optical waveguides formed in the surface SOI layer providing the communication between these components. The tunable wavelength element is controlled to adjust the optical wavelength. Separate discrete lensing elements may be disposed in the cavity with the gain medium, providing efficient coupling of the optical signal into the SOI waveguides. Alternatively, the gain medium itself may be formed to include spot converting tapers on its endfaces, the tapers used to provide mode matching into the associated optical waveguides.


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