The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jun. 23, 2008
Applicants:
Padmaraj Sanjeevarao, Austin, TX (US);
Tahmina Akhter, Austin, TX (US);
David W. Chrudimsky, Austin, TX (US);
Inventors:
Padmaraj Sanjeevarao, Austin, TX (US);
Tahmina Akhter, Austin, TX (US);
David W. Chrudimsky, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory including a data line, a sense amplifier, and an array of memory cells. The memory includes a transistor for coupling the data line to memory cells of the array for reading. The transistor is biased at a voltage that is higher than a voltage that the data line is biased during precharging. The transistor is part of a regulation circuit. The regulation circuit includes transistors with a higher dielectric breakdown voltage than transistors of the sense amplifier.