The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jun. 22, 2007
Eun-seok Park, Yongin-si, KR;
Kuang-woo Nam, Suwon-si, KR;
In-sang Song, Seoul, KR;
Chul-soo Kim, Hwaseong-si, KR;
Yun-kwon Park, Dongducheon-si, KR;
Eun-seok Park, Yongin-si, KR;
Kuang-woo Nam, Suwon-si, KR;
In-sang Song, Seoul, KR;
Chul-soo Kim, Hwaseong-si, KR;
Yun-Kwon Park, Dongducheon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An integrated device is constructed by integrating an FBAR and a tunable capacitor. The integrated device includes a substrate; a resonator formed on the substrate; a driving electrode layer formed on the substrate apart from the resonator; a first electrode layer formed upwardly apart from the substrate and facing the resonator; and a second electrode layer formed upwardly apart from the substrate and facing the driving electrode layer, the second electrode layer stepped from the first electrode layer. Accordingly, the integrated device can increase the tuning range and mitigate the parasitic resistance.