The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2010

Filed:

Jul. 13, 2006
Applicants:

Byong-gwon Song, Seoul, KR;

Deuk-seok Chung, Seongnam-si, KR;

Ho-suk Kang, Seoul, KR;

Kyoung-won Min, Icheon-si, KR;

Moon-jin Shin, Yongin-si, KR;

Inventors:

Byong-Gwon Song, Seoul, KR;

Deuk-Seok Chung, Seongnam-si, KR;

Ho-Suk Kang, Seoul, KR;

Kyoung-Won Min, Icheon-si, KR;

Moon-Jin Shin, Yongin-si, KR;

Assignee:

Samsung SDI Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

A field emission backlight unit includes: upper substrate and lower substrate separated from each other and facing each other; an anode formed on a bottom surface of the upper substrate; a phosphor layer formed on a bottom surface of the anode; a plurality of cathodes and gate electrodes alternately formed on a top surface of the lower substrate; and emitters formed on the cathodes; the gate electrodes include first gate electrodes formed of a conductive material on the top surface of the lower substrate and second gate electrodes having a greater thickness than that of the first gate electrodes and formed on a top surface of the first gate electrodes.


Find Patent Forward Citations

Loading…