The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Oct. 19, 2007
Peter Rieve, Windeck-Dattenfeld, DE;
Marcus Walder, Wipperfuerth, DE;
Konstantin Seibel, Siegen, DE;
Jens Prima, Gehrde, DE;
Arash Mirhamed, Vellmar, DE;
Peter Rieve, Windeck-Dattenfeld, DE;
Marcus Walder, Wipperfuerth, DE;
Konstantin Seibel, Siegen, DE;
Jens Prima, Gehrde, DE;
Arash Mirhamed, Vellmar, DE;
STMicroelectronics N.V., Amsterdam, NL;
Abstract
A TFA (thin film on ASIC) image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent. The TFA includes an intermetal dielectric layer, pixel back electrodes, vias, metal contacts, a transparent conductive oxide (TCO) layer, and an intrinsic absorption layer with a thickness between 300 nm and 600 nm. The pixel back electrodes are disposed over the intermetal dielectric layer, which is disposed over the ASIC. The vias connect to the pixel back electrodes and the metal contacts, which are formed in the intermetal dielectric layer. The TCO is disposed above the intrinsic absorption layer, which is disposed above the pixel back electrodes.