The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2010

Filed:

Feb. 26, 2008
Applicants:

Michael David Church, Sebastian, FL (US);

Alexander Kalnitsky, San Francisco, CA (US);

Lawrence George Pearce, Palm Bay, FL (US);

Michael Ray Jayne, Satellite Beach, FL (US);

Thomas Andrew Jochum, Durham, NC (US);

Inventors:

Michael David Church, Sebastian, FL (US);

Alexander Kalnitsky, San Francisco, CA (US);

Lawrence George Pearce, Palm Bay, FL (US);

Michael Ray Jayne, Satellite Beach, FL (US);

Thomas Andrew Jochum, Durham, NC (US);

Assignee:

Intersil Americas Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit includes a first and second diode connected in parallel. The first diode has a first breakdown voltage and has first P type region and first N type region adjacent to each other at the surface of the substrate of a substrate to form a lateral diode. The second diode has a second breakdown voltage less than the first breakdown voltage and has a second P type region and second N type region lateral adjacent to each other in the substrate to form a lateral diode below the surface The first and second N type regions overlap and the first and second P type region being electrically connected whereby the first and second diodes are in parallel.


Find Patent Forward Citations

Loading…