The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jul. 01, 2003
Shiro Sakai, Tokushima, JP;
Tomoya Sugahara, Tokushima, JP;
Shiro Sakai, Tokushima, JP;
Tomoya Sugahara, Tokushima, JP;
Nitride Semiconductor Co., Ltd., Tokushima, JP;
Abstract
An LED emitting light of wavelength mainly 375 nm or below. The LED includes a GaN layer (), an n-clad layer (), an AlInGaN buffer layer (), a light emitting layer (), a p-clad layer (), a p-electrode (), and an n-electrode () arranged on a substrate (). The light emitting layer () has a multi-layer quantum well structure (MQW) in which an InGaN well layer and an AlInGaN barrier layer are superimposed. The quantum well structure increases the effective band gap of the InGaN well layer and reduces the light emitting wavelength. Moreover, by using the AlInGaN buffer layer () as the underlying layer of the light emitting layer (), it is possible to effectively inject electrons into the light emitting layer (), thereby increasing the light emitting efficiency.