The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Sep. 27, 2007
Applicants:
Sung-kwon Lee, Kyoungki-do, KR;
Min-suk Lee, Kyoungki-do, KR;
Inventors:
Sung-Kwon Lee, Kyoungki-do, KR;
Min-Suk Lee, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes forming a first pattern over a substrate, forming an oxide-based layer over the first pattern, forming a hard mask layer over the oxide-based layer, etching the hard mask layer at a first substrate temperature, and etching the oxide-based layer to form a second pattern, wherein the oxide-based layer is etched at a second substrate temperature which is greater than the first substrate temperature using a gas including fluorine (F) and carbon (C) as a main etch gas.