The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7700490 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 20, 2010

Filed:

Jan. 19, 2007
Applicants:

Tsuyoshi Matsumura, Hiratsuka, JP;

Kazuhiko Takase, Yokohama, JP;

Inventors:

Tsuyoshi Matsumura, Hiratsuka, JP;

Kazuhiko Takase, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A residue treatment system includes a treatment tank which treats residue with etching fluid, the residue being generated in a trench formed in an insulating film by dry etching; a measurement unit which measures a characteristic amount of the etching fluid; and a control unit which calculates treatment time for removing the residue on the basis of a value obtained by measuring the characteristic amount, the control unit calculating the treatment time by using correlation between an etching rate of the insulating film and the characteristic amount.


Find Patent Forward Citations

Matsumura, Tsuyoshi. (2010). Semiconductor manufacturing method for removing residue generated by dry etching (U.S. Patent No. 7700490). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7700490

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