The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Nov. 08, 2006
Mitsuru Sato, Suwa, JP;
Sumio Utsunomiya, Suwa, JP;
Mitsuru Sato, Suwa, JP;
Sumio Utsunomiya, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
The present invention provides a semiconductor device fabrication method capable of reducing the thermal load on the substrate. The present invention also provides a semiconductor device fabrication method capable of improving the characteristics of a semiconductor element. The semiconductor device fabrication method according to the present invention comprises a step of thermally processing a semiconductor layer that is deposited on a substrate by using, as a heat source, the flame of a gas burner that uses a mixed gas of hydrogen and oxygen as fuel. As a result of thermal processing, the semiconductor layer is re-crystallized and an oxide film is formed on the surface of the semiconductor layer. The oxide film can be used as a gate insulation film and a capacitive insulation film.