The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Oct. 21, 2005
Tsutomu Onishi, Niigata, JP;
Takeshi Akatsuka, Niigata, JP;
Shunichi Igarashi, Niigata, JP;
Naoetsu Electronics Co., Ltd., Niigata, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
The present invention can finely arrange p-type diffusion layers and n-type diffusion layers. A p-type diffusion layerand an n-type diffusion layerare simultaneously formed on a back surfaceof a semiconductor substratein a state that the p-type diffusion layerand the n-type diffusion layerare arranged close to each other, and a back surfaceside of the semiconductor substrateon which outer end portions of the p-type diffusion layersand the n-type diffusion layersare brought into contact with each other is removed thus separating the p-type diffusion layerand the n-type diffusion layerfrom each other and hence, the p-type diffusion layerand the n-type diffusion layercan be separately arranged in a state that the p-type diffusion layerand the n-type diffusion layerare arranged close to each other.