The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Mar. 07, 2008
Hyoung Soo Ko, Seoul, KR;
Byung Gook Park, Seoul, KR;
Seung Bum Hong, Seongnam-si, KR;
Chul Min Park, Yongin-si, KR;
Woo Young Choi, Yongin-si, KR;
Jong Pil Kim, Yongin-si, KR;
Jae Young Song, Yongin-si, KR;
Sang Wan Kim, Yongin-si, KR;
Hyoung Soo Ko, Seoul, KR;
Byung Gook Park, Seoul, KR;
Seung Bum Hong, Seongnam-si, KR;
Chul Min Park, Yongin-si, KR;
Woo Young Choi, Yongin-si, KR;
Jong Pil Kim, Yongin-si, KR;
Jae Young Song, Yongin-si, KR;
Sang Wan Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seoul National University Industry Foundation, Seoul, KR;
Abstract
A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process parameters upon the performance of a device is reduced to improve reliability of the device in mass-production, and factors of degrading measuring sensitivity is removed to improve the performance of the device.