The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jan. 25, 2007
Yasuyoshi Takai, Kawasaki, JP;
Masafumi Sano, Yokohama, JP;
Keishi Saito, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided is a deposited film containing microcrystalline silicon by plasma CVD, which includes changing at least one of conditions selected from a high frequency power density, a bias voltage with respect to an interelectrode distance, a bias current with respect to an electrode area, a high frequency power with respect to a source gas flow rate, a ratio of a diluting gas flow rate to a source gas flow rate, a substrate temperature, a pressure, and an interelectrode distance, between conditions for forming a deposited film of a microcrystalline region and conditions for forming a deposited film of an amorphous region; and forming a deposited film under conditions within a predetermined range in the vicinity of boundary conditions under which the crystal system of the deposited film substantially changes between a amorphous state and a microcrystalline state.