The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Nov. 26, 2004
Applicants:
Raymond J. E. Hueting, Hengelo, NL;
Erwin A. Hijzen, Blanden, BE;
Inventors:
Raymond J. E. Hueting, Hengelo, NL;
Erwin A. Hijzen, Blanden, BE;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A trench MOSFET with drain (), drift region () body () and source (). In order to improve the figure of merit for use of the MOSFET as control and sync FETs, the trench () is partially filled with dielectric () adjacent to the drift region () and a graded doping profile is used in the drift region ().