The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Nov. 01, 2007
Mariko Takayanagi, New York, NY (US);
Mariko Takayanagi, New York, NY (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In one aspect of the present invention, a semiconductor device may include a semiconductor substrate; a first gate dielectric layer provided on the semiconductor substrate, the relative dielectric constant ratio of the first gate dielectric layer being no less than 8; a second gate dielectric layer provided on the semiconductor substrate, the relative dielectric constant ratio of the second gate dielectric layer being no less than 8; a first gate electrode provided on the first gate dielectric layer and made of germanide which is a metallic compound containing a metal element of a rare earth metal; and a second gate electrode provided on the second gate dielectric layer and made of silicide which is a metallic compound containing the same metal element of a rare earth metal as the germanide in the first gate electrode.