The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Feb. 18, 2009
Applicants:
Mitsuru Arai, Kodaira, JP;
Shinichiro Wada, Fuchu, JP;
Hideaki Nonami, Ome, JP;
Inventors:
Assignees:
Hitachi ULSI Systems Co., Ltd., Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/788 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device having a bipolar transistor improved with heat dissipation. A semiconductor device having bipolar transistors formed in a plurality of device forming regions electrically isolated from each other by device isolation trenches traversing the semiconductor layer, in which a device isolation trench for each of unit bipolar transistors connected in parallel is removed and the plurality of unit bipolar transistors connected in series are entirely surrounded with one device isolation trench.