The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Oct. 10, 2008
Applicant:
Sung Kee Park, Icheon-si, KR;
Inventor:
Sung Kee Park, Icheon-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, Kyoungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to an isolation film in a semiconductor device and method of forming the same. An isolation film is formed in a doped region of a peripheral region, in which the doped region is isolated from a deep well region of a cell region and the isolation film is thicker than an isolation film of the cell region so that a parasitic transistor is not generated and a leakage current can be prevented.