The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2010

Filed:

Sep. 06, 2007
Applicants:

Sug-hun Hong, Yongin-si, KR;

Myoung-bum Lee, Seoul, KR;

Gab-jin Nam, Seoul, KR;

Inventors:

Sug-Hun Hong, Yongin-si, KR;

Myoung-Bum Lee, Seoul, KR;

Gab-Jin Nam, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device includes a tunnel insulating layer pattern on a channel region of a substrate, a charge trapping layer pattern on the tunnel insulating layer pattern, a blocking layer pattern on the charge trapping layer pattern, and a gate electrode including a conductive layer pattern on the blocking layer pattern and a barrier layer pattern on the conductive layer pattern. The conductive layer pattern includes a metal.


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