The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2010

Filed:

Jan. 17, 2008
Applicants:

Tatsuya Hirata, Osaka, JP;

Shouzi Tanaka, Nara, JP;

Ryohei Miyagawa, Kyoto, JP;

Inventors:

Tatsuya Hirata, Osaka, JP;

Shouzi Tanaka, Nara, JP;

Ryohei Miyagawa, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicide layer (first silicide layer, second silicide layer) is laminated on top laminate surfaces of gates of a transmission transistor and a reset transistor, respectively. Each of the first silicide layer and the second silicide layer respectively formed on each of the gates extends in a direction along the main surface of the semiconductor substrate among at least a portion of a plurality of image pixels, connecting gates with one another among the respective image pixels. On the other hand, a signal outputter is not in contact with any silicide layers, has the top laminate surface that is covered with an insulating layer, and is connected with other transistors via a metal wiring layer.


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