The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2010

Filed:

Jun. 08, 2007
Applicants:

Tetsushi Yamamoto, Tokyo, JP;

Tadahiko Hirai, Tokyo, JP;

Shunji Imanaga, Yokohama, JP;

Inventors:

Tetsushi Yamamoto, Tokyo, JP;

Tadahiko Hirai, Tokyo, JP;

Shunji Imanaga, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/744 (2006.01);
U.S. Cl.
CPC ...
Abstract

A sensor includes a first gate electrode, a second gate electrode, a semiconductor layer, a gate-insulating layer, a source electrode, a drain electrode, and a sensing portion including an accommodating part and a receiving layer. The first and second gate electrodes are opposed to each other with the sensing portion, the semiconductor layer, and the gate-insulating layer therebetween. One surface of the semiconductor layer is in contact with a surface of the sensing portion, and another surface of the semiconductor layer is in contact with the gate-insulating layer. A surface of the gate-insulating layer is in contact with the second gate electrode. The first gate electrode and the receiving layer are opposed to each other with the accommodating part therebetween. The source and drain electrodes are in contact with the semiconductor layer.


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