The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Nov. 20, 2007
Applicant:
Cha-hsin Lin, Tainan, TW;
Inventor:
Cha-Hsin Lin, Tainan, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a solid state electrolytes memory device is provided. An insulator layer is formed on a substrate. A conductive layer is formed on the insulator layer. At least two openings partially overlapped and capable of communicating with each other are formed in the conductive layer, so that the conductive layer forms at least a pair of tip electrodes. Thereafter, solid state electrolytes are filled in the openings.