The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Dec. 09, 2007
Wen-chieh Wang, Taoyuan County, TW;
Jin-tau Huang, Taoyuan, TW;
Wei-hui Hsu, Taoyuan County, TW;
Tse-yao Huang, Taipei, TW;
Wen-Chieh Wang, Taoyuan County, TW;
Jin-Tau Huang, Taoyuan, TW;
Wei-Hui Hsu, Taoyuan County, TW;
Tse-Yao Huang, Taipei, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method of forming a shadow layer on a wafer bevel region is provided. First, a substrate having the wafer bevel region and a central region is provided. Thereafter, an upper insulator and a lower insulator are provided. The upper insulator is disposed on an upper surface of the substrate and at least covers the central region. The lower insulator is disposed on a lower surface of the substrate and at least covers the central region. A shadow layer is then formed on the upper surface which is not covered by the upper insulator and on the lower surface which is not covered by the lower insulator. Next, the upper insulator and the lower insulator are removed.