The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Dec. 27, 2006
David Matsumoto, San Jose, CA (US);
Michael Brennan, Campbell, CA (US);
Vidyut Gopal, Saratoga, CA (US);
Jean Yang, Glendale, CA (US);
David Matsumoto, San Jose, CA (US);
Michael Brennan, Campbell, CA (US);
Vidyut Gopal, Saratoga, CA (US);
Jean Yang, Glendale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for forming a semiconductor device may include forming a silicon oxynitride mask layer over a first layer. The first layer may be etched using the silicon oxynitride mask layer, to form a pattern in the first layer. The pattern may be filled with a dielectric material. The dielectric material may be planarized using a ceria-based slurry and using the silicon oxynitride mask layer as a stop layer.