The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Dec. 18, 2007
Chunping Long, Beijing, CN;
Xinxin LI, Beijing, CN;
Chunping Long, Beijing, CN;
Xinxin Li, Beijing, CN;
Beijing BOE Optoelectronics Technology Co., Ltd., Beijing, CN;
Abstract
A method of forming a gate line and gate electrode and a method of manufacturing a TFT array substrate. The metal gate line and gate electrode can be formed by: providing a substrate, forming a photoresist layer on the substrate, a photoresist pattern being formed complementary with that of the gate line and gate electrode, forming a metal Cu thin film or a composite thin film comprising a metal Cu thin film on the substrate, and removing the photoresist pattern and the metal Cu thin film or composite thin film comprising the metal Cu thin film formed thereon from the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile