The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Jun. 28, 2008
Applicant:
Chan Sun Hyun, Icheon-si, KR;
Inventor:
Chan Sun Hyun, Icheon-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of forming a dual damascene pattern of a semiconductor device, horns that occur while forming a trench constituting the dual damascene pattern are removed in an intermediate process of forming the trench. Thus, the source of particles, which occur due to the horns in a cleaning process performed after the dual damascene pattern is formed, may be removed. Accordingly, an increase of contact resistance due to particles may be prevented, and a reduction in the yield of semiconductor devices may also be improved.