The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Jul. 31, 2008
Masayasu Miyata, Suwa, JP;
Masamitsu Uehara, Shiojiri, JP;
Masayasu Miyata, Suwa, JP;
Masamitsu Uehara, Shiojiri, JP;
Seiko Epson Corporation, , JP;
Abstract
A gate insulating filmis formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating filmcontains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cmis less than both the absorbance of infrared radiation at the wave number of 830 cmand the absorbance of infrared radiation at the wave number of 900 cmwhen the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cmand the absorbance of infrared radiation at the wave number of 770 cmis defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cmand the absorbance of infrared radiation at the wave number of 990 cmis defined as B, then A and B satisfy the relation: A/B is 1.8 or more.