The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Apr. 26, 2006
Ning Cheng, San Jose, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Timothy Thurgate, Sunnyvale, CA (US);
Wei Zheng, Santa Clara, CA (US);
Ashot Melik-martirosian, Sunnyvale, CA (US);
Angela Hui, Fremont, CA (US);
Chih-yuh Yang, San Jose, CA (US);
Ning Cheng, San Jose, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Timothy Thurgate, Sunnyvale, CA (US);
Wei Zheng, Santa Clara, CA (US);
Ashot Melik-Martirosian, Sunnyvale, CA (US);
Angela Hui, Fremont, CA (US);
Chih-Yuh Yang, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Methods for fabricating flash memory devices are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises forming a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack. A first impurity doped region is formed within the substrate underlying the trench.