The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Mar. 18, 2009
Doo Go Baik, Suwon, KR;
Bang Won OH, Seongnam, KR;
Seok Beom Choi, Daejeon, KR;
Su Yeol Lee, Seongnam, KR;
Doo Go Baik, Suwon, KR;
Bang Won Oh, Seongnam, KR;
Seok Beom Choi, Daejeon, KR;
Su Yeol Lee, Seongnam, KR;
Samsung Electro-Mechanics Co., Ltd., Gyunggi-do, KR;
Abstract
A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.