The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Nov. 01, 2007
Jeong-hee Cho, Hwaseong-si, KR;
Hyun-tae Kang, Anyang-si, KR;
Jang-hoon Kim, Yongin-si, KR;
Ki-hyun Chyun, Suwon-si, KR;
Jeong-Hee Cho, Hwaseong-si, KR;
Hyun-Tae Kang, Anyang-si, KR;
Jang-Hoon Kim, Yongin-si, KR;
Ki-Hyun Chyun, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method for measuring critical dimensions of a pattern using an overlay measuring apparatus is provided. The method includes setting a first scan range, inputting a step pitch for the overlay measuring apparatus, inputting X and Y coordinates of a point on a reticle, and inputting a size of the reference pattern. The method further includes inputting a position of the reference pattern, inputting a second scan range, measuring the size of the reference pattern, and inputting an ideal pattern size. The method still further includes measuring a size and a first Z-axial focus position of a top region of the reference pattern, storing the first Z-axial focus position, measuring a size of the selected pattern of the first wafer using stored reference information, and determining whether the size of the selected pattern is suitable relative to the ideal pattern size.