The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Mar. 13, 2009
Yukio Taniguchi, Yokohama, JP;
Masakiyo Matsumura, Yokohama, JP;
Hirotaka Yamaguchi, Yokohama, JP;
Mikihiko Nishitani, Yokohama, JP;
Susumu Tsujikawa, Yokohama, JP;
Yoshinobu Kimura, Yokohama, JP;
Masayuki Jyumonji, Yokohama, JP;
Yukio Taniguchi, Yokohama, JP;
Masakiyo Matsumura, Yokohama, JP;
Hirotaka Yamaguchi, Yokohama, JP;
Mikihiko Nishitani, Yokohama, JP;
Susumu Tsujikawa, Yokohama, JP;
Yoshinobu Kimura, Yokohama, JP;
Masayuki Jyumonji, Yokohama, JP;
Advanced LCD Technologies Development Center Co., Ltd., Yokohama, JP;
Abstract
A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile