The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2010

Filed:

Jul. 07, 2004
Applicants:

Jean-luc Morand, Tours, FR;

Emmanuel Collard, Tours, FR;

André Lhorte, Saint Averin, FR;

Inventors:

Jean-Luc Morand, Tours, FR;

Emmanuel Collard, Tours, FR;

André Lhorte, Saint Averin, FR;

Assignee:

STMicroelectronics S.A., Montrouge, FR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/095 (2006.01); H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
Abstract

A vertical rectifying and protection power diode, formed in a lightly-doped semiconductor layer of a first conductivity type, resting on a heavily-doped substrate of the first conductivity type, having a first ring-shaped region, of the first conductivity type more heavily-doped than the layer and more lightly doped than the substrate, surrounding an area of the layer and extending to the substrate; and a second ring-shaped region, doped of the second conductivity type, extending at the surface of the first region and on either side thereof; a first electrode having a thin layer of a material capable of forming a Schottky diode with the layer, resting on the area of the layer and on at least a portion of the second ring-shaped region with which it forms an ohmic contact.


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