The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Sep. 05, 2007
Yujiro Hara, Yokohama, JP;
Akira Kinno, Yokohama, JP;
Tsuyoshi Hioki, Yokohama, JP;
Isao Amemiya, Machida, JP;
Shuichi Uchikoga, Yokohama, JP;
Yujiro Hara, Yokohama, JP;
Akira Kinno, Yokohama, JP;
Tsuyoshi Hioki, Yokohama, JP;
Isao Amemiya, Machida, JP;
Shuichi Uchikoga, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An optical sensor element includes: an n-type semiconductor region formed on a substrate; an i-type semiconductor region which is formed on the substrate between the p-type semiconductor region and the n-type semiconductor region and which is lower in impurity concentration than the p-type semiconductor region and the n-type semiconductor region; an anode electrode formed on the insulation film and connected to the p-type semiconductor region; and a cathode electrode formed on the insulation film and connected to the n-type semiconductor region. A reverse bias voltage Vis applied when detecting the photocurrent, the reverse bias voltage Vsatisfying a following relation.V<V<V