The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Nov. 19, 2003
Andrew R. Barron, Houston, TX (US);
Dennis J. Flood, Oberlin, OH (US);
Elizabeth A. Whitsitt, Houston, TX (US);
Robin E. Anderson, Houston, TX (US);
Graham B. I. Scott, Katy, TX (US);
Andrew R. Barron, Houston, TX (US);
Dennis J. Flood, Oberlin, OH (US);
Elizabeth A. Whitsitt, Houston, TX (US);
Robin E. Anderson, Houston, TX (US);
Graham B. I. Scott, Katy, TX (US);
William Marsh Rice University, Houston, TX (US);
New Cyte, Inc., Sudbury, MA (US);
Abstract
A field effect transistor and a method for making the same. In one embodiment, the field effect transistor comprises a source; a drain; a gate; at least one carbon nanotube on the gate; and a dielectric layer that coats the gate and a portion of the at least one carbon nanotube, wherein the at least one carbon nanotube has an exposed portion that is not coated with the dielectric layer, and wherein the exposed portion is functionalized with at least one indicator molecule. In other embodiments, the field effect transistor is a biochem-FET.