The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Mar. 20, 2007
Masayuki Chikamatsu, Ibaraki, JP;
Atsushi Itakura, Ibaraki, JP;
Tatsumi Kimura, Ibaraki, JP;
Satoru Shimada, Ibaraki, JP;
Yuji Yoshida, Ibaraki, JP;
Reiko Azumi, Ibaraki, JP;
Kiyoshi Yase, Ibaraki, JP;
Masayuki Chikamatsu, Ibaraki, JP;
Atsushi Itakura, Ibaraki, JP;
Tatsumi Kimura, Ibaraki, JP;
Satoru Shimada, Ibaraki, JP;
Yuji Yoshida, Ibaraki, JP;
Reiko Azumi, Ibaraki, JP;
Kiyoshi Yase, Ibaraki, JP;
Abstract
The present invention encompasses an organic field-effect transistor comprising an n-type organic semiconductor formed of a fullerene derivative having a fluorinated alkyl group which is expressed by the following chemical formula (wherein at least any one of R, Rand Ris a perfluoro alkyl group or a partially-fluorinated semifluoro alkyl group each having a carbon number of 1 to 20), and a field-effect transistor production method comprising forming an organic semiconductor layer using the fullerene derivative by a solution process, and subjecting the organic semiconductor layer to a heat treatment in an atmosphere containing nitrogen or argon or in vacuum to provide enhanced characteristics to the organic semiconductor layer. The present invention makes it possible to form an organic semiconductor layer by a solution process and provide an organic field-effect transistor excellent in electron mobility and on-off ratio and capable of operating even in an ambient air atmosphere.