The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2010

Filed:

Mar. 24, 2005
Applicants:

Hideomi Koinuma, Tokyo, JP;

Kenji Itaka, Kanagawa, JP;

Mitsugu Yamashiro, Kanagawa, JP;

Inventors:

Hideomi Koinuma, Tokyo, JP;

Kenji Itaka, Kanagawa, JP;

Mitsugu Yamashiro, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A substrate having organic thin film capable of growing two dimensionally such organic thin film as Cand a transistor using the same are constituted with a substrate () having organic thin film by sequentially depositing a buffer layer () and organic thin film () on the substrate (), and with the buffer layer orienting the organic thin film (). A layer easily oriented with the substrate () and the buffer layer () may be inserted between the substrate () and the buffer layer (). A sapphire substrate as the substrate (), pentacene or pentacene fluoride as the buffer layer (), and Cor rubrene as the organic thin film () may be used, thereby Cor rubrene two dimensional thin film of high quality can be obtained. By using such a substrate () having organic thin film, a field effect transistor of high quality can be realized.


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