The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Jul. 19, 2006
Cheng-tsang Yu, Wufong Township, Taichung County, TW;
Liang-wen Wu, Banciao, TW;
Tzu-chi Wen, Tainan, TW;
Fen-ren Chien, Yonghe, TW;
Cheng-Tsang Yu, Wufong Township, Taichung County, TW;
Liang-Wen Wu, Banciao, TW;
Tzu-Chi Wen, Tainan, TW;
Fen-Ren Chien, Yonghe, TW;
Formosa Epitaxy Incorporation, Taoyuan, TW;
Abstract
A number of light-emitting layer structures for the GaN-based LEDs that can increase the lighting efficiency of the GaN-based LEDs on one hand and facilitate the growth of epitaxial layer with better quality on the other hand are provided. The light-emitting layer structure provided is located between the n-type GaN contact layer and the p-type GaN contact layer. Sequentially stacked on top of the n-type GaN contact layer is the light-emitting layer containing a lower barrier layer, at least one intermediate layer, and an upper barrier layer. That is, the light-emitting layer contains at least one intermediate layer interposed between the upper and lower barrier layers. When there are multiple intermediate layers inside the light-emitting layer, there is an intermediate barrier layer interposed between every two immediately adjacent intermediate layers.