The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2010

Filed:

Mar. 24, 2008
Applicants:

Satyadev Nagaraja, San Jose, CA (US);

Hidetoshi Nozaki, Sunnyvale, CA (US);

Inventors:

Satyadev Nagaraja, San Jose, CA (US);

Hidetoshi Nozaki, Sunnyvale, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light sensor cell includes a photosensitive element, a floating diffusion region, and a gate oxide disposed between the photosensitive element and the floating diffusion region. The gate oxide has a non-uniform thickness, with a greater thickness near the photosensitive element and a lesser thickness near the floating diffusion region. A transfer gate is disposed on the gate oxide. The transfer gate has a non-uniform threshold voltage, with a greater threshold voltage near the photosensitive element and a lesser threshold voltage near the floating diffusion region.


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