The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Jul. 31, 2007
Siddhartha Bhowmik, Salem, OR (US);
Steven E. Kelly, Corvallis, OR (US);
Siddhartha Bhowmik, Salem, OR (US);
Steven E. Kelly, Corvallis, OR (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A silicon nitride layer is formed on at least a back side of a silicon wafer substrate of a semiconductor device. An oxide layer is formed on at least the silicon nitride layer on the back side of the substrate. The oxide layer protects the silicon nitride layer during processing of the device. The oxide layer is removed prior to packaging the device. After components have been formed on a front side of the substrate opposite the back side, packaging is attached to the silicon nitride layer. The components provide a functionality of the device. The silicon nitride layer completely remains on the back side of the substrate after fabrication of the device has been completed. The silicon nitride layer is adapted to minimize and does minimize bowing of the device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile