The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Feb. 21, 2007
Yasuhiro Tada, Kanagawa-ken, JP;
Akihiko Hanya, Kanagawa-ken, JP;
Yasuhiro Tada, Kanagawa-ken, JP;
Akihiko Hanya, Kanagawa-ken, JP;
Stanley Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device manufacturing method can produce semiconductor light emitting/detecting devices that have high connective strength and high luminous energy by increasing contact areas of electrodes thereof and decreasing enclosed areas of electrodes thereof. A wafer is provided with a semiconductor substrate and a semiconductor epitaxial layer. A plurality of substrate concave portions and epitaxial layer concave portions are formed on the semiconductor substrate and the semiconductor epitaxial layer, respectively. Substrate electrodes and epitaxial layer electrodes are formed in the substrate concave portions and the epitaxial layer concave portions. A substrate surface electrode and an epitaxial layer surface electrode can be formed on the semiconductor substrate and the substrate electrodes and the semiconductor epitaxial layer and the epitaxial layer electrodes, respectively. The wafer can be diced at a location that includes both the substrate electrodes and the epitaxial layer electrodes, and can then be separated to provide the device(s).