The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Feb. 02, 2004
Applicants:
Tadahiro Ohmi, Sendai-shi, Miyagi 980-0813, JP;
Akinobu Teramoto, Sendai, JP;
Inventors:
Tadahiro Ohmi, Sendai-shi, Miyagi 980-0813, JP;
Akinobu Teramoto, Sendai, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract
An insulating film is formed as a pore-wall protective film () on pore walls in a porous layer () by the use of a mixed gas plasma of a noble gas and an insulating film forming gas generated by microwave excitation. As a result, the pore-wall protective film can have film properties as a protective film.
Quick Actions:
Ohmi, Tadahiro. (2010). Method for manufacturing semiconductor device (U.S. Patent No. 7691725). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7691725
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile